MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR

MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR

The present invention relates to manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor. To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium ox...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SOH, SOON-YOUNG, HAHN, YOUNG-SIK, MYEONG, WAN-JAE, JUNG, MAN-WOO, LEE, JOO-HYEONG, NAM, HO-SEONG, LEE, JIN-SEO, AHN, GUI-RYONG
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
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Beschreibung
Zusammenfassung:The present invention relates to manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor. To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium oxide slurry. The polishing slurry have a high particle stability and removal selectivity, and also less scratches after chemical mechanical polishing of semiconductor .