ETCH METHOD IN THE MANUFACTURE OF AN INTEGRATED CIRCUIT

The present invention provides a method for etching a substrate in the manufacture of a semiconductor device, the method comprising contacting a surface of the substrate with ions extracted from a plasma formed from a gas comprising one or more of an oxygen-containing species, a nitrogen-containing...

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Bibliographische Detailangaben
Hauptverfasser:	SPARKS, TERRY, G, RAUF, SHAHID
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for etching a substrate in the manufacture of a semiconductor device, the method comprising contacting a surface of the substrate with ions extracted from a plasma formed from a gas comprising one or more of an oxygen-containing species, a nitrogen-containing species and an inert gas, and separately contacting the surface of the substrate with a plasma formed from a gas comprising a fluorine-containing species. La présente invention concerne un procédé de gravure de substrat appliqué dans la fabrication d'un dispositif à semi-conducteur, ce procédé consistant à mettre la surface du substrat en contact avec des ions extraits d'un plasma constitué d'un gaz contenant au moins une espèce oxygénée, une espèce azotée et un gaz inerte, et à mettre séparément en contact la surface du substrat avec un plasma formé d'un gaz comprenant une espèce contenant du fluor.