STRAINED LAYERS WITHIN SEMICONDUCTOR BUFFER STRUCTURES

A semiconductor workpiece including a substrate 10, a relaxed buffer layer 14, 18 including a graded portion formed on the substrate, and at least one strained transitional layer 16 within the graded portion of the relaxed buffer layer 14, 18 and method of manufacturing the same. The at least one st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FIGUET, CHRISTOPHE, CODY, NYLES, W, KENNARD, MARK
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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