RESISTS FOR PHOTOLITHOGRAPHY

New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not l...

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Bibliographische Detailangaben
Hauptverfasser:	THOMPSON, LARRY, F, SERPIL, GONEN, WILLIAMS, COOPER, GREGORY, D, CHEN, ZHIYUN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density. L'invention concerne de nouvelles possibilités pour fournir un résist non linéaire pour la lithographie au moyen de réactions photochimiques réversibles à plusieurs étapes utilisant des techniques à deux étapes. Lesdites réactions peuvent fournir une exposition quadratiquement dépendante de l'intensité de la lumière. Plusieurs exemples spécifiques, comprenant mais sans y être limités, l'utilisation de nanocristaux sont également décrits. Combinées à une double formation de motifs, ces approches peuvent créer une densité de caractéristiques limites de sous-diffraction.