INTEGRATED THIN-FILM PHOTO MODULE PROVIDED WITH VERTICAL ELECTRON-HOLE JUNCTIONS

The invention relates to an integrated thin-film photo module provided with vertical electron-hole junctions and can be used in power engineering, for self-contained radio power supply, in instrumentation engineering and biomedicine. The inventive integrated thin-film photo module provided with vertical electron-hole junctions comprises a substrate coated with a layer of amorphous i-conductivity type silicon, areas which alternate with each other and have different conductivity types, different doping quantities and / or energy-gap widths, an antireflecting coating on a front surface and ohmic contacts. The alternating areas are embodied in the form of horizontally opposition strips in the initial amorphous silicon film and heterostructure areas are embodied in such a way that they have variable proportions of crystalline, microcrystalline, nanocrystalline and amorphous phases. L'invention concerne un module photographique intégré à film mince à passages verticaux électrons-trous, qui comprend un substrat comportant une couche déposée de silicium amorphe ayant une conductivité de type "i", des domaines alternés possédant des conductivités différentes, des degrés de dopage et/ou des largeurs de bande interdite différents, un revêtement antireflet sur la surface avant, et des contacts ohmiques. Les domaines alternés forment dans le film initial de silicium amorphe des "peignes" opposés dans la direction horizontale, et les hétérostructures sont fabriquées avec un rapport variable des phases cristalline, microcristalline, nanocristalline et amorphe.