LOW TEMPERATURE DOPED SILICON LAYER FORMATION

A doped silicon layer is formed in a batch process chamber 529 at low temperatures. The silicon precursor 580 for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor 582 is an n-type dopant, such as phosphine. The silicon precursor 580 can be flowed into the proc...

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Hauptverfasser:	ZAGWIJN, PETER, MARC, VAN AERDE, STEVEN, R.A, FISCHER, PAMELA, RENE, OOSTERLAKEN, GERARDUS MARIA, THEODORUS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A doped silicon layer is formed in a batch process chamber 529 at low temperatures. The silicon precursor 580 for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor 582 is an n-type dopant, such as phosphine. The silicon precursor 580 can be flowed into the process chamber 529 with the flow of the dopant precursor 582 or separately from the flow of the dopant precursor 582. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow. Selon la présente invention, une couche de silicium dopée est formée dans une chambre de traitement discontinu (529) à basses températures. Le précurseur de silicium (580) pour la formation de couche de silicium est un polysilane, comme le trisilane, et le précurseur dopant (582) est un dopant de type n, comme la phosphine. Ledit précurseur de silicium (580) peut être acheminé par flux dans la chambre de traitement (529) avec le flux du précurseur dopant (582) ou séparément à partir du flux du précurseur dopant (582). De manière surprenante, le taux de dépôt est indépendant du flux de précurseur dopant, tandis que l'incorporation de dopant augmente linéairement avec le flux de précurseur dopant.