MOS TRANSISTOR AND A METHOD OF MANUFACTURING A MOS TRANSISTOR

The MOS transistor (1) of the invention comprises a gate electrode (10), a channel region (4), a drain contact region (6) and a drain extension region (7) mutually connecting the channel region (4) and the drain contact region (6). The MOS transistor (1) further comprises a shield layer (11) which e...

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Bibliographische Detailangaben

Hauptverfasser:	THEEUWEN, STEPHAN JO CECILE HENRI, DE_BOET, JOHANNES ADRIANUS MARIA, KLAPPE, JOS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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