METHOD FOR IMPROVING REFRACTIVE INDEX CONTROL IN PECVD DEPOSITED A-SINY FILMS

An apparatus, device, system, and method for controlling the index of refraction of at least one layer of amorphous silicon-based film deposited on a substrate are disclosed. The apparatus, device, system and method include providing at least one volume of each of N2, SiH4, and He, and depositing th...

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Bibliographische Detailangaben
Hauptverfasser:	CAPEWELL, DAVID, R, YANG, LIYOU, WHALEY, RALPH, ABELES, JOSEPH, KHARAS, BORIS, DIMARCO, LOUIS, MOHSENI, HOORMAN, MALEY, NAGENDRANATH, KWAKERNAAK, MARTIN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BORING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PERFORMING OPERATIONS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TURNING
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Beschreibung
Zusammenfassung:	An apparatus, device, system, and method for controlling the index of refraction of at least one layer of amorphous silicon-based film deposited on a substrate are disclosed. The apparatus, device, system and method include providing at least one volume of each of N2, SiH4, and He, and depositing the at least one layer of amorphous silicon-based film on the substrate by vapor deposition. The device may include a waveguide that includes at least one layer of amorphous silicon-based film, wherein the at least one layer of amorphous silicon-based film is deposited by vapor deposition using an at least one volume of each of N2, SiH4, and He. L'invention porte sur un appareil, sur un dispositif, sur un système et sur un procédé de contrôle de l'indice de réfraction d'au moins une couche de film à base de silicium amorphe déposée sur un substrat. L'appareil, le dispositif, le système et le procédé consistent à utiliser au moins un volume de N2, de SiH4, et de He, et à déposer ladite couche de film à base de silicium amorphe sur le substrat par métallisation par dépôt sous vide. Le dispositif peut comprendre au moins une couche de film à base de silicium amorphe déposée par métallisation par dépôt sous-vide et comprenant au moins un volume de N2, de SiH4 et deHe.