MASK-PATTERN DETERMINATION USING TOPOLOGY TYPES

A method for determining a mask pattern is described. During the method, a first mask pattern that includes a plurality of second regions corresponding to the first regions of the photo-mask is provided. Then, a second mask pattern is determined based on the first mask pattern and differences betwee...

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Bibliographische Detailangaben

Hauptverfasser:	ABRAMS, DANIEL, S, ASHTON, CHRISTOPHER, JAMES
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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