THERMOELECTRIC MATERIAL AND PROCESS FOR PRODUCING THE SAME

This invention provides an MnSiy (1.7 = y = 1.8) based P-type thermoelectric material having a high performance index, and a process for producing the thermoelectric material. This process comprises the steps of providing as raw materials manganese and silicon satisfying stoichiometric composition o...

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Hauptverfasser:	ZAITSEV, VLADIMIR KONSTANTINOVICH, EREMIN, IVAN SERGEEVICH, SOLOMKIN, FEDOR YURIEVICH, AOYAMA, IKUTO, FEDOROV, MIKHAIL IVANOVICH, SAMUNIN, ALEKSANDR YURIEVICH
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This invention provides an MnSiy (1.7 = y = 1.8) based P-type thermoelectric material having a high performance index, and a process for producing the thermoelectric material. This process comprises the steps of providing as raw materials manganese and silicon satisfying stoichiometric composition of manganese silicide MnSiy as a base material, germanium to be added to the base material, and impurities to be added to the base material, germanium being provided in an amount corresponding to 0.3 at.% to 1 at.% of the sum of silicon and germanium as group 4 elements, melting the raw materials to prepare a melt, and cooling the melt at a cooling rate of more than 0ºC/min and not more than 1.5ºC/min to grow crystals. Matériau thermoélectrique de type P à base de MnSiy (1,7 = y =1,8) à indice de performance élevé, et procédé d'élaboration. Procédé : fourniture, comme matières premières, de manganèse et de silicium répondant à la composition stoechiométrique de siliciure de manganèse MnSiy comme matériau de base, avec adjonction de germanium à ce matériau, et adjonction d'impuretés, le germanium en quantité comprise entre 0,3 et 1 % de la somme du silicium et du germanium comme éléments du groupe 4, puis fusion des matières premières pour donner un produit fondu qui est ensuite refroidi à un taux de refroidissement supérieur à 0 °C/min et qui ne dépasse pas 1,5 °C/min pour le développement de cristaux.