ATMOSPHERIC PROCESS AND SYSTEM FOR CONTROLLED AND RAPID REMOVAL OF POLYMERS FROM HIGH ASPECT RATIO HOLES

A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-He...

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Bibliographische Detailangaben
Hauptverfasser:	TOKMOULINE, ISKANDER, BOLLINGER, LYNN, DAVID
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES MOSAICS NUCLEAR ENGINEERING NUCLEAR PHYSICS PAPERHANGING PERFORMING OPERATIONS PHYSICS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TRANSPORTING
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Beschreibung
Zusammenfassung:	A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures. L'invention concerne un système générant un flux de gaz chaud pour graver un polymère sur un substrat utilisé dans la fabrication de dispositifs à semi-conducteurs et MEMS sans dommages de surface. Le processus de gravure est utilisé, en particulier, pour éliminer un polymère d'orifices avec un rapport d'aspect hauteur-largeur et largeur-hauteur relativement élevé pouvant comprendre des tranchées, avec des rapports d'aspect relativement importants pour l'élimination des polymères utilisés en connexion avec la fabrication de microstructures.