TUNGSTEN ELECTROPROCESSING

Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressu...

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Bibliographische Detailangaben
Hauptverfasser:	JIA, RENHE, MAO, DAXIN, CHEN, LIANG-YUH, TSAI, STAN D, WANG, ZHIHONG, TIAN, YUAN, TRAN, HUYEN, KAREN, KARUPPIAH, LAKSH
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING TRANSPORTING
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Beschreibung
Zusammenfassung:	Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase. L'invention concerne des procédés permettant de polir du tungstène. Pendant ECMP, l'augmentation de la tension dans le tampon n'est pas toujours suffisante pour augmenter la vitesse de polissage. Lors du polissage du tungstène, la simple augmentation de la tension appliquée diminuera, dans certains cas, la vitesse d'élimination. L'augmentation de la pression de la force aval entre le tampon à polir et le substrat, la tension appliquée et la vitesse de rotation du substrat et le tampon à polir permet d'augmenter la vitesse d'élimination du tungstène.