FINE TREATMENT AGENT AND FINE TREATMENT METHOD USING SAME

A fine treatment agent for fine treatment of a film stack including a tungsten film and a silicon oxide film is characterized in that it includes at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, the fine treatment agent for performing fine treatm...

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Bibliographische Detailangaben
Hauptverfasser:	NAKASHIMA, HIDEKI, ITO, KANENORI, KIKUYAMA, HIROHISA, HASEBE, RUI, NII, KEIICHI, KUJIME, TAKANOBU, TSURUMARU, HITOSHI, WAKI, MASAHIDE
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A fine treatment agent for fine treatment of a film stack including a tungsten film and a silicon oxide film is characterized in that it includes at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, the fine treatment agent for performing fine treatment to the film stack of the tungsten film and the silicon oxide film by controlling an etch rate, and a fine treatment method using such fine treatment agent are provided. La présente invention concerne un agent de traitement fin destiné au traitement fin d'un empilement de films incluant un film de tungstène et un film d'oxyde de silicium, ledit agent étant caractérisé en ce qu'il comprend au moins un composé parmi le fluorure d'hydrogène, l'acide nitrique, le fluorure d'ammonium et le chlorure d'ammonium. L'invention concerne ainsi l'agent de traitement fin destiné au traitement fin de l'empilement du film de tungstène et du film d'oxyde de silicium en contrôlant la vitesse d'attaque, ainsi qu'un procédé de traitement fin utilisant ledit agent.