TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS

A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stre...

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Bibliographische Detailangaben
Hauptverfasser:	KWAN, MICHAEL, CHIU, WANG, RONGPING, SEAMONS, MARTIN, JAY, XIA, LI-QUN, M'SAAD, HI, HUANG, LIHUA, LI, JUNG, KEE, BUM, BALSEANU, MIHAELA, WITTY, DEREK, R, STERN, LEWIS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described. Un film contraint est formé sur le substrat. Ce substrat est placé dans une zone de processus et un plasma est formé d'un gaz de processus fourni dans la zone de processus, ce gaz de processus possédant un gaz contenant du silicium et un gaz contenant de l'azote. Un gaz diluant tel que de l'azote peut être aussi ajouté. Ce matériau contraint ainsi déposé peut être exposé à un rayonnement ultraviolet ou à des faisceaux d'électrons de façon à augmenter la valeur de contrainte des matériaux déposés. Par ailleurs, ou dans une variante, un traitement au plasma d'azote peut être utilisé pour augmenter la valeur de contrainte du matériau durant son dépôt. Cette invention concerne aussi des procédés à plasma pulsé permettant le dépôt des matériaux contraints.