ONE HUNDRED MILLIMETER HIGH PURITY SEMI-INSULATING SINGLE CRYSTAL SILICON CARBIDE WAFER

A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than 75 millimeters and less than 125 millimeters, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 CM-2 ,and a combined concentration of shallow level dopants less than 5E16 cm3 ....

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Bibliographische Detailangaben
1. Verfasser:	JENNY, JASON, RONALD
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than 75 millimeters and less than 125 millimeters, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 CM-2 ,and a combined concentration of shallow level dopants less than 5E16 cm3 . Présentation d'une plaquette de carbure de silicium monocristal de polytype avec diamètre compris entre 75 millimètres et 125 millimètres, de résistivité supérieure à 10 000 ohm/cm, densité de microcanal inférieure à 200 CM-2 et concentration combinée de dopants de faible profondeur de moins de 5E16 cm3.