METHOD FOR BILAYER RESIST PLASMA ETCH

A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then, SiC1

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Bibliographische Detailangaben
Hauptverfasser:	NGUYEN, WENDY, LEE, CHRIS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CABLES CINEMATOGRAPHY CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INSULATORS PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then, SiC1