SEMICONDUCTOR DEVICE WITH IMPROVED THERMAL CHARACTERISTICS

A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element forined therein. At least one channel is formed in a back surface of the substrate opposite the upper surface...

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Bibliographische Detailangaben
Hauptverfasser:	BRENNAN, JOHN, MCKENNA, FREUND, JOSEPH, MICHAEL, SHANAMAN,III, RICHARD, HANDLY, SHAH, SUJAL, DIPAK
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element forined therein. At least one channel is formed in a back surface of the substrate opposite the upper surface of the substrate, the channel being formed proximate the active region. The channel is substantially filled with one or more layers of a thermally conductive material and configured so as to provide a thermal conduction path for conducting heat away from the active region. L'invention concerne un dispositif à semi-conducteur qui comprend un substrat et une zone active formée dans le substrat à proximité d'une surface supérieure du substrat. La zone active comprend au moins un élément de circuit. Au moins un canal est formé sur une surface arrière du substrat à l'opposé de la surface supérieure du substrat, ce canal étant formé à proximité de la zone active. Ce canal est sensiblement rempli d'une ou de plusieurs couches d'un matériau conducteur et conçu pour constituer une voie de conduction thermique permettant d'éloigner la chaleur de la zone active.