NEW MATERIAL AND METHOD OF FABRICATION THEREFOR

The present invention concerns new methods of fabricating a silicon material comprising phosphorus. The methods allow high levels of phosphorus to be combined with the silicon. In one aspect of the invention a sample of phosphorus is surrounded with a sample of silicon. At least some of the phosphor...

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Hauptverfasser:	CONNOR, STEPHEN, EDWARD, DUNKLEY, JOHN, JOSEPH, TELFORD, BRETT
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	CONNOR, STEPHEN, EDWARD DUNKLEY, JOHN, JOSEPH TELFORD, BRETT
description	The present invention concerns new methods of fabricating a silicon material comprising phosphorus. The methods allow high levels of phosphorus to be combined with the silicon. In one aspect of the invention a sample of phosphorus is surrounded with a sample of silicon. At least some of the phosphorus is then vaporised and caused to interact with the silicon. La présente invention se rapporte à de nouveaux procédés de fabrication d'une matière à base de silicium comportant du phosphore. Ces procédés permettent la combinaison de taux élevé de phosphore avec le silicium. Dans un mode de réalisation de l'invention, un échantillon de phosphore est entouré d'un échantillon de silicium. Au moins une partie du phosphore est ensuite vaporisée puis amenée à interagir avec le silicium.
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The methods allow high levels of phosphorus to be combined with the silicon. In one aspect of the invention a sample of phosphorus is surrounded with a sample of silicon. At least some of the phosphorus is then vaporised and caused to interact with the silicon. La présente invention se rapporte à de nouveaux procédés de fabrication d'une matière à base de silicium comportant du phosphore. Ces procédés permettent la combinaison de taux élevé de phosphore avec le silicium. Dans un mode de réalisation de l'invention, un échantillon de phosphore est entouré d'un échantillon de silicium. 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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	NEW MATERIAL AND METHOD OF FABRICATION THEREFOR
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