METHOD OF LACQUERING SEMICONDUCTOR SUBSTRATES

The invention provides a method of lacquering substrates, in particular semiconductor substrates, whose surfaces have three-dimensional topographies. For this purpose, the substrate is sprayed with a lacquer that is modified with a solvent, and subsequently the applied lacquer layer is homogenized i...

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Bibliographische Detailangaben
1. Verfasser:	HOEPPNER, JUERGEN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention provides a method of lacquering substrates, in particular semiconductor substrates, whose surfaces have three-dimensional topographies. For this purpose, the substrate is sprayed with a lacquer that is modified with a solvent, and subsequently the applied lacquer layer is homogenized in a solvent atmosphere. The lacquering process can then be finished by baking the lacquer layer. L'invention concerne un procédé de laquage de substrats, en particulier de substrats de semi-conducteurs, dont les surfaces présentent des topographies tridimensionnelles. A cet effet, le substrat est vaporisé par une laque modifiée par un solvant, puis la couche de laque appliquée est homogénéisée dans une atmosphère de solvant. La finition dudit procédé de laquage peut ensuite être assurée par cuisson de la couche de laque.