METHOD FOR DEPOSITING A LOW-K MATERIAL HAVING A CONTROLLED THICKNESS RANGE

A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during t...

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Bibliographische Detailangaben
Hauptverfasser:	CHO, SEON-MEE, LANG, CHI-I, LEE, PETER, WAI-MAN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during the remaining time of the deposition. L'invention concerne un procédé de dépôt, à épaisseur contrôlée et à épaisseur non uniforme, d'une couche d'une matière diélectrique à faible k utilisant le dépôt chimique en phase vapeur (CVD), qui dépose la matière pendant une durée déterminée pendant une partie du dépôt à une pression plus élevée d'un gaz réactif que pendant la durée restante de la phase de dépôt.