SEMICONDUCTOR DEVICE, METHOD FOR GENERATING SEMICONDUCTOR DEVICE PATTERN, METHOD FOR SEMICONDUCTOR DEVICE, AND PATTERN GENERATOR FOR SEMICONDUCTOR DEVICE

The realization of a circuit stable action by efficiently absorbing power source noise. This invention is characterized by having a MOS structure bypass capacitor having a gate electrode so formed as to extend from a power source wiring region down to a vacant region adjacent to the power source wir...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TSUJIKAWA, HIROYUKI, ITOH, MITSUMI, SHIMAZAKI, KENJI, SAWADA, MASATOSHI, BENNO, HIROSHI, HONMA, JUNKO
Format: Patent
Sprache:eng ; fre ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!