SEMICONDUCTOR DEVICE, METHOD FOR GENERATING SEMICONDUCTOR DEVICE PATTERN, METHOD FOR SEMICONDUCTOR DEVICE, AND PATTERN GENERATOR FOR SEMICONDUCTOR DEVICE

The realization of a circuit stable action by efficiently absorbing power source noise. This invention is characterized by having a MOS structure bypass capacitor having a gate electrode so formed as to extend from a power source wiring region down to a vacant region adjacent to the power source wiring region and free of another functional layer and formed over one conductivity type diffused region via a capacitor insulation film, and a substrate contact formed under a ground wiring region and fixing a substrate potential. This invention is also characterized in that the bypass capacitor has a contact that contacts the power source wiring in the surface of the gate electrode, and in that the one conductivity type diffused region is connected to the substrate contact diffused region. The realization of a circuit stable action by efficiently absorbing power source noise. This invention is characterized by having a MOS structure bypass capacitor having a gate electrode so formed as to extend from a power source wiring region down to a vacant region adjacent to the power source wiring region and free of another functional layer and formed over one conductivity type diffused region via a capacitor insulation film, and a substrate contact formed under a ground wiring region and fixing a substrate potential. This invention is also characterized in that the bypass capacitor has a contact that contacts the power source wiring in the surface of the gate electrode, and in that the one conductivity type diffused region is connected to the substrate contact diffused region. La présente invention concerne la mise en oeuvre d'une action de stabilité de circuit grâce à une absorption efficace du bruit de la source d'alimentation. L'invention se caractérise en ce qu'elle fait intervenir un condensateur de dérivation à structure MOS ayant une électrode de porte formée de sorte qu'elle s'étend d'une zone de câblage de source d'alimentation en descendant jusqu'à une zone libre adjacente à la zone de câblage de source d'alimentation et dépourvue d'une autre couche fonctionnelle et formée sur une zone diffuse de type à une conductivité via une film d'isolation de condensateur, et un contact de substrat formé en-dessous de la zone de câblage de masse et fixant un potentiel de contact de substrat. L'invention se caractérise également en ce que le condensateur de dérivation présente un contact qui permet la mise en contact du câble de source d'alimentation dans la surface de l'éle