SEMICONDUCTOR STRUCTURES AND POLARIZATION MODULATOR DEVICES

Polarization modulator devices (300) can be formed to take advantage of multi-layered semiconductor structures. High quality epitaxial layers (26) of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Polarization modulator devices (300) can be formed to take advantage of multi-layered semiconductor structures. High quality epitaxial layers (26) of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. On peut former des dispositifs modulateurs de polarisation (300) en utilisant les avantages qu'offrent les structures semi-conductrices à couches multiples. On peut faire pousser des couches épitaxiales de qualité élevée (26) de matériaux monocristallins sur des substrats monocristallins superposés (22) tels que de larges tranches de silicium par la formation d'un substrat correspondant destiné à la croissance de couches monocristallines. Une couche d'accueil tampon (24) comprend une couche d'oxyde monocristallin espacée avec une tranche de silicium par une couche d'interface amorphe (28) d'oxyde de silicium. La couche d'interface amorphe dissi