METHOD OF OBTAINING A CDTE OR CDZNTE SINGLE CRYSTAL AND THE SINGLE CRYSTAL THUS OBTAINED

The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure. La présente invention se rapporte au domaine de l'obtention de monocristaux de CdTe ou de Cd...

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Bibliographische Detailangaben
Hauptverfasser:	TRIBOULET, ROBERT, GEORGES, LUCIEN, SAID HASSANI, SAID, ASSOUMANI
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline structure. La présente invention se rapporte au domaine de l'obtention de monocristaux de CdTe ou de CdZnTe. Elle est relative à un procédé amélioré en phase solide pour l'obtention de cristaux de grande taille de CdZnTe ou de CdTe possédant une excellente structure cristalline.