METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) WITH ALTERING THE CONCENTRATION OF OXIDIZING AGENT IN SLURRY
Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a prede...
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| creator | HAGGART, DAVID, WESTON, JR MAUTZ, KARL, EMERSON MALTABES, JOHN |
| description | Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.
L'invention concerne un procédé de polissage mécanique et chimique d'un film métallique (155) à la surface d'un substrat (150). Ce procédé consiste à mélanger un précurseur (201) de bouillie liquide avec un agent oxydant (202) pour fournir une bouillie liquide (200) avec une concentration prédéterminée en agent et à fournir cette bouillie à un tampon à polir (140) pour polir le film à une vitesse de polissage prédéterminée. Ce polissage est modifié en changeant la concentration en agent à la fin du polissage. Etant donné que la vitesse de polissage est réduite, on améliore le résultat final. La concentration est modifiée en ajoutant d'autres agents oxydants ou de réduction. |
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L'invention concerne un procédé de polissage mécanique et chimique d'un film métallique (155) à la surface d'un substrat (150). Ce procédé consiste à mélanger un précurseur (201) de bouillie liquide avec un agent oxydant (202) pour fournir une bouillie liquide (200) avec une concentration prédéterminée en agent et à fournir cette bouillie à un tampon à polir (140) pour polir le film à une vitesse de polissage prédéterminée. Ce polissage est modifié en changeant la concentration en agent à la fin du polissage. Etant donné que la vitesse de polissage est réduite, on améliore le résultat final. La concentration est modifiée en ajoutant d'autres agents oxydants ou de réduction.</description><edition>7</edition><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030123&DB=EPODOC&CC=WO&NR=03007360A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030123&DB=EPODOC&CC=WO&NR=03007360A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAGGART, DAVID, WESTON, JR</creatorcontrib><creatorcontrib>MAUTZ, KARL, EMERSON</creatorcontrib><creatorcontrib>MALTABES, JOHN</creatorcontrib><title>METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) WITH ALTERING THE CONCENTRATION OF OXIDIZING AGENT IN SLURRY</title><description>Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.
L'invention concerne un procédé de polissage mécanique et chimique d'un film métallique (155) à la surface d'un substrat (150). Ce procédé consiste à mélanger un précurseur (201) de bouillie liquide avec un agent oxydant (202) pour fournir une bouillie liquide (200) avec une concentration prédéterminée en agent et à fournir cette bouillie à un tampon à polir (140) pour polir le film à une vitesse de polissage prédéterminée. Ce polissage est modifié en changeant la concentration en agent à la fin du polissage. Etant donné que la vitesse de polissage est réduite, on améliore le résultat final. La concentration est modifiée en ajoutant d'autres agents oxydants ou de réduction.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKwjAURbs4iPoPz00HIVLQObwmzYMkr6SRqkspEhdFC_X_0Yof4HQP59xpdnMqGi5AcwA0yhFKC06hkf6LFVuqDfkSVuiqNTQUDUgbVRhdNAqQPSofg4zEHlgDH6mg85hl-QlAHmp7COE0zybX7j6kxW9n2VKriGaT-mebhr67pEd6tQ2LXIh9vhNym__zeQOJKzYw</recordid><startdate>20030123</startdate><enddate>20030123</enddate><creator>HAGGART, DAVID, WESTON, JR</creator><creator>MAUTZ, KARL, EMERSON</creator><creator>MALTABES, JOHN</creator><scope>EVB</scope></search><sort><creationdate>20030123</creationdate><title>METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) WITH ALTERING THE CONCENTRATION OF OXIDIZING AGENT IN SLURRY</title><author>HAGGART, DAVID, WESTON, JR ; MAUTZ, KARL, EMERSON ; MALTABES, JOHN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO03007360A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HAGGART, DAVID, WESTON, JR</creatorcontrib><creatorcontrib>MAUTZ, KARL, EMERSON</creatorcontrib><creatorcontrib>MALTABES, JOHN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAGGART, DAVID, WESTON, JR</au><au>MAUTZ, KARL, EMERSON</au><au>MALTABES, JOHN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) WITH ALTERING THE CONCENTRATION OF OXIDIZING AGENT IN SLURRY</title><date>2003-01-23</date><risdate>2003</risdate><abstract>Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.
L'invention concerne un procédé de polissage mécanique et chimique d'un film métallique (155) à la surface d'un substrat (150). Ce procédé consiste à mélanger un précurseur (201) de bouillie liquide avec un agent oxydant (202) pour fournir une bouillie liquide (200) avec une concentration prédéterminée en agent et à fournir cette bouillie à un tampon à polir (140) pour polir le film à une vitesse de polissage prédéterminée. Ce polissage est modifié en changeant la concentration en agent à la fin du polissage. Etant donné que la vitesse de polissage est réduite, on améliore le résultat final. La concentration est modifiée en ajoutant d'autres agents oxydants ou de réduction.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | METHOD FOR CHEMICAL MECHANICAL POLISHING (CMP) WITH ALTERING THE CONCENTRATION OF OXIDIZING AGENT IN SLURRY |
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