CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES
A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step...
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| creator | BARKER, ROSS, E., II MANDIGO, GLENN, C GOLDBERG, WENDY, B SULLIVAN, IAN, G LACK, CRAIG, D |
| description | A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.
L'invention concerne un procédé de polissage d'une plaquette dans un porteur au moyen d'un tampon de polissage, ledit procédé consistant à réguler un rapport de vitesse de chariot en fonction de la vitesse du porteur (PS en fonction de CS) au sein d'une portée spécifique ou à commander une première étape de polissage avec un rapport (PS en fonction de CS) situé entre environ 150 :1 et environ 1 :150, cette étape étant suivie d'une seconde étape de polissage avec une vitesse de chariot comprise entre environ 0 et 20 rpm, tandis qu'est maintenue la vitesse du porteur utilisée à la première étape de polissage, ce qui maximalise l'élimination de matière résiduelle d'une surface de plaquette imprimée au moyen du polissage. |
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L'invention concerne un procédé de polissage d'une plaquette dans un porteur au moyen d'un tampon de polissage, ledit procédé consistant à réguler un rapport de vitesse de chariot en fonction de la vitesse du porteur (PS en fonction de CS) au sein d'une portée spécifique ou à commander une première étape de polissage avec un rapport (PS en fonction de CS) situé entre environ 150 :1 et environ 1 :150, cette étape étant suivie d'une seconde étape de polissage avec une vitesse de chariot comprise entre environ 0 et 20 rpm, tandis qu'est maintenue la vitesse du porteur utilisée à la première étape de polissage, ce qui maximalise l'élimination de matière résiduelle d'une surface de plaquette imprimée au moyen du polissage.</description><edition>7</edition><language>eng ; fre</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020502&DB=EPODOC&CC=WO&NR=0214014A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020502&DB=EPODOC&CC=WO&NR=0214014A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BARKER, ROSS, E., II</creatorcontrib><creatorcontrib>MANDIGO, GLENN, C</creatorcontrib><creatorcontrib>GOLDBERG, WENDY, B</creatorcontrib><creatorcontrib>SULLIVAN, IAN, G</creatorcontrib><creatorcontrib>LACK, CRAIG, D</creatorcontrib><title>CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES</title><description>A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.
L'invention concerne un procédé de polissage d'une plaquette dans un porteur au moyen d'un tampon de polissage, ledit procédé consistant à réguler un rapport de vitesse de chariot en fonction de la vitesse du porteur (PS en fonction de CS) au sein d'une portée spécifique ou à commander une première étape de polissage avec un rapport (PS en fonction de CS) situé entre environ 150 :1 et environ 1 :150, cette étape étant suivie d'une seconde étape de polissage avec une vitesse de chariot comprise entre environ 0 et 20 rpm, tandis qu'est maintenue la vitesse du porteur utilisée à la première étape de polissage, ce qui maximalise l'élimination de matière résiduelle d'une surface de plaquette imprimée au moyen du polissage.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB19nD19XR29FHwdXX2cPQDMwN8HP0cgzyjHEM8_f0U_N2AciFA4eBQp-CQIMcQ12AeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhIf7m9gZGhiYGjiaGxMhBIAoHYnUQ</recordid><startdate>20020502</startdate><enddate>20020502</enddate><creator>BARKER, ROSS, E., II</creator><creator>MANDIGO, GLENN, C</creator><creator>GOLDBERG, WENDY, B</creator><creator>SULLIVAN, IAN, G</creator><creator>LACK, CRAIG, D</creator><scope>EVB</scope></search><sort><creationdate>20020502</creationdate><title>CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES</title><author>BARKER, ROSS, E., II ; MANDIGO, GLENN, C ; GOLDBERG, WENDY, B ; SULLIVAN, IAN, G ; LACK, CRAIG, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO0214014A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2002</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>BARKER, ROSS, E., II</creatorcontrib><creatorcontrib>MANDIGO, GLENN, C</creatorcontrib><creatorcontrib>GOLDBERG, WENDY, B</creatorcontrib><creatorcontrib>SULLIVAN, IAN, G</creatorcontrib><creatorcontrib>LACK, CRAIG, D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BARKER, ROSS, E., II</au><au>MANDIGO, GLENN, C</au><au>GOLDBERG, WENDY, B</au><au>SULLIVAN, IAN, G</au><au>LACK, CRAIG, D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES</title><date>2002-05-02</date><risdate>2002</risdate><abstract>A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.
L'invention concerne un procédé de polissage d'une plaquette dans un porteur au moyen d'un tampon de polissage, ledit procédé consistant à réguler un rapport de vitesse de chariot en fonction de la vitesse du porteur (PS en fonction de CS) au sein d'une portée spécifique ou à commander une première étape de polissage avec un rapport (PS en fonction de CS) situé entre environ 150 :1 et environ 1 :150, cette étape étant suivie d'une seconde étape de polissage avec une vitesse de chariot comprise entre environ 0 et 20 rpm, tandis qu'est maintenue la vitesse du porteur utilisée à la première étape de polissage, ce qui maximalise l'élimination de matière résiduelle d'une surface de plaquette imprimée au moyen du polissage.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES |
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