DEPOSITION OF TUNGSTEN SILICIDE FILMS

A method of forming tungsten silicide (WSix) films is provided. The tungsten silicide (WSix) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600 DEG C. The as-deposited tungsten silicide (WSix) layer has a resistivity less than about 60 mu OME...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, CHILIANG, HONG, SOONIL, YOON, HYUNGSUK A, BRANSHAW, KIMBERLY
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming tungsten silicide (WSix) films is provided. The tungsten silicide (WSix) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600 DEG C. The as-deposited tungsten silicide (WSix) layer has a resistivity less than about 60 mu OMEGA -cm. L'invention concerne un procédé de formation de couches minces en siliciure de tungstène (WSix). Les couches minces de siliciure de tungstène (WSix) sont formées par réaction d'une source de tungstène avec une source de silicium à une température supérieure à environ 600 DEG C. La couche de siliciure de tungstène (WSix) ainsi déposée présente une résistivité inférieure à environ 60 mu OMEGA -cm.