SINGLE TRANSISTOR RARE EARTH MANGANITE FERROELECTRIC NONVOLATILE MEMORY CELL

SINGLE TRANSISTOR RARE EARTH MANGANITE FERROELECTRIC NONVOLATILE MEMORY CELL

A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: GNADINGER, FRED, P
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same. L'invention concerne un dispositif mémoire formé à partir d'un type de cellule à transistor unique. Ce dispositif possède un substrat, une couche ferroélectrique qui est un film constitué de manganite de terres rares et une couche d'oxyde d'interface placée entre le substrat et la couche ferroélectrique. L'invention concerne ce dispositif et les procédés de fabrication correspondants.