A METHOD TO REDUCE LEAKAGE DURING A SEMI-CONDUCTOR BURN-IN PROCEDURE

A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently...

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Bibliographische Detailangaben
1. Verfasser:	WONG, BAN, P
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY BEER BIOCHEMISTRY CHEMISTRY ENZYMOLOGY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY MICROBIOLOGY MUTATION OR GENETIC ENGINEERING PHYSICS SPIRITS TESTING VINEGAR WINE
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Beschreibung
Zusammenfassung:	A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently, reduces the sub-threshold leakage current. L'invention concerne un procédé destiné à réduire le courant de fuite sous le seuil pendant une opération de déverminage d'un semi-conducteur. Ce procédé consiste à appliquer une tension de polarisation inverse sur ce dispositif pendant l'opération de déverminage. La tension de polarisation inverse augmente la tension de seuil du dispositif à semi-conducteur et, par voie de conséquence, réduit le courant de fuite sous le seuil.