HIGH VOLTAGE MOSFET STRUCTURES

A power MOSFET device that achieves low power loss characteristics by minimizing source-to-drain channel on-resistance, including a semiconductor block having a first and a second surfaces, a source region, a drain region, a drift region (106) within the semiconductor block, and a body region betwee...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZAFRANI, MAXIME, NEILSON, JOHN, M., S, POLCE, NESTORE, JONES, SCOTT
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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