SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

A hard mask (105) consisting of SiCN is formed on a fluorine-added carbon film (103) to thereby improve adhesiveness between the fluorine-added carbon film (103) and the hard mask (105) and prevent separation. In addition, the hard mask (105) consisting of SiCN can have a larger selection ratio, and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	YOSHITAKA, HIKARU
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A hard mask (105) consisting of SiCN is formed on a fluorine-added carbon film (103) to thereby improve adhesiveness between the fluorine-added carbon film (103) and the hard mask (105) and prevent separation. In addition, the hard mask (105) consisting of SiCN can have a larger selection ratio, and a smaller permittivity than one consisting of SiN or SiC. Selon cette invention, un masque dur (105) en SiCN est formé sur un film carbone au fluor (103), ce qui permet d'améliorer l'adhérence entre ledit film carbone au fluor (103) et le masque dur (105) et d'empêcher leur séparation. En outre, le masque dur (105) constitué de SiCN peut avoir un taux de sélection plus élevé et une permittivité plus faible qu'un masque de SiN ou de SiC.