INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE

An insulated-gate field-effect semiconductor device, preferably of the SOI type, has source (3) and drain (4) regions in a semiconductor body portion (1) at a first major surface of a semiconductor substrate (10). The gate-terminal metallisation (25) is present at an opposite second major surface (1...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	WARWICK, ANDREW, M
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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