Variable lateral quantum confinement transistor

A quantum interference device in the form of a variable lateral confinement resonant tunneling transistor having a quantum waveguide structure including a primary current transmission path defined by a region between source and drain electrodes and where there is a resonance region therebetween in which quantum interference of tunneling wave functions establish a resonance tunneling condition that extends beyond the primary current path. Upon the application of a voltage across the drain and source electrodes, a tunneling current can be made to flow. A gate electrode formed on the quantum well structure remote from the primary current transmission path includes a variable depletion region thereunder or an electrostatic pinch off region, the size of which is a function of the magnitude of the bias voltage applied thereto. The size of the depletion region or the pinch off region affects the dimensions of the resonance region and accordingly the current flow between the source and drain electrodes as a result of a change in the energy and momentum conditions for resonance tunneling.