Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same

Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same

A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each...

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Bibliographische Detailangaben
Hauptverfasser: Nam, Gabjin, Kim, Yubin, Chung, Eunae, An, Taehyun, Kim, Donghwan, Nakanishi, Toshiro, Kim, Suhwan, Kim, Jin Soak, Baek, Sungkweon
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.