Semiconductor devices and methods of manufacturing the same

Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a fir...

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Bibliographische Detailangaben
Hauptverfasser: Yeo, Kyoung Hwan, Bai, KeunHee, Ha, Seungseok, Shin, Heonjong, Park, Eunsil, Cha, Dongho, Paak, Sunhom Steve
Format: Patent
Sprache:eng
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Zusammenfassung:Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.