Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor

Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor

A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one first dielectric layer, which only adjoins lower sections of the walls of the trench and the base of the trench. Parasitic capacitances can b...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Trautmann, Achim, Banzhaf, Christian Tobias
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one first dielectric layer, which only adjoins lower sections of the walls of the trench and the base of the trench. Parasitic capacitances can be reduced when using this substrate for power transistors.