Preventing shorting between source and/or drain contacts and gate

Preventing shorting between source and/or drain contacts and gate

Electrical shorting between source and/or drain contacts and a conductive gate of a FinFET-based semiconductor structure are prevented by forming the source and drain contacts in two parts, a bottom contact part extending up to a height of the gate cap and an upper contact part situated on at least...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schepis, Dominic J, Cheng, Kangguo, Surisetty, Charan V, Reznicek, Alexander
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Electrical shorting between source and/or drain contacts and a conductive gate of a FinFET-based semiconductor structure are prevented by forming the source and drain contacts in two parts, a bottom contact part extending up to a height of the gate cap and an upper contact part situated on at least part of the bottom contact part.