IR cut filter, method for manufacturing the same, and solid-state imaging device

A solid-state imaging device comprises a CMOS sensor, a circuit board, a ceramic plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The CMOS sensor is mounted on the circuit board. The circuit board is fixed to the ceramic plate such that the CMOS sensor is placed inside an...

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Bibliographische Detailangaben
Hauptverfasser:	Higuchi, Reiji, Murayama, Satoru
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORGANIC MACROMOLECULAR COMPOUNDS PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	A solid-state imaging device comprises a CMOS sensor, a circuit board, a ceramic plate, an IR cut filter, a taking lens, a lens holder, and a support barrel. The CMOS sensor is mounted on the circuit board. The circuit board is fixed to the ceramic plate such that the CMOS sensor is placed inside an opening of the ceramic plate. The sides of the CMOS sensor are surrounded by the ceramic plate. The IR cut filter is fixed to the ceramic plate so as to cover the opening. The CMOS sensor is disposed behind the taking lens. The IR cut filter is disposed between the taking lens and the CMOS sensor. A light-shielding layer is formed over the entire periphery of edge portions of an incident surface of the IR cut filter. Harmful rays such as reflective light is blocked by the light-shielding layer.