High speed voltage level shifter

In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supp...

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Bibliographische Detailangaben
Hauptverfasser:	Lu, De, Vilangudipitchai, Ramaprasath, Narayanan, Venkat, Vattikonda, Rakesh, Sinharoy, Samrat, Chen, Rui
Format:	Patent
Sprache:	eng
Schlagworte:	AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:	In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.