Semiconductor devices including increased area contacts

A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A plurality of selective epitaxial growth portions can be each grown on an upper surface of a respective one of the plurality of active patterns. A source/drain contact can be extending across the plurality of selective epitaxial growth portions to remain above top surfaces of first ones of plurality of active patterns that are spaced apart by the first distance between the first ones of plurality of active patterns and can include an extension that extends toward the substrate to below top surfaces of two of the plurality of active patterns that are spaced apart by the second distance between the two of the plurality of active patterns.