Semiconductor integrated circuit apparatus and manufacturing method for same

A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resis...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ariyoshi Junichi, Matsuura Katsuyoshi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.