Forming a stress compensation layer and structures formed thereby

Methods of forming a microelectronic structure are described. Those methods comprise forming a stress compensation layer on a substrate, forming at least one opening within the stress compensation layer, and forming an interconnect paste within the at least one opening.

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Bibliographische Detailangaben
Hauptverfasser:	Suh Daewoong, Jayaraman Saikumar
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Methods of forming a microelectronic structure are described. Those methods comprise forming a stress compensation layer on a substrate, forming at least one opening within the stress compensation layer, and forming an interconnect paste within the at least one opening.