Semiconductor device and method of forming the semiconductor device

A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting th...

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Bibliographische Detailangaben
Hauptverfasser: Karve Gauri, Bergendahl Marc Adam, Sporre John Ryan, Robison Robert Russell, Miller Eric R, Teehan Sean, Lie Fee Li
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting the inner and outer gates.