Semiconductor device
A semiconductor device is provided including a first electrode and a first semiconductor layer of a first conductivity type connected to the first electrode. The semiconductor device further includes a second semiconductor layer of a second conductivity type provided on the first semiconductor layer...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device is provided including a first electrode and a first semiconductor layer of a first conductivity type connected to the first electrode. The semiconductor device further includes a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a second electrode provided on the third semiconductor layer. The semiconductor device further includes a third electrode disposed between the first electrode and the second electrode. The semiconductor device further includes a fourth electrode having an upper end connected to the second electrode, where the fourth electrode has a higher resistivity than the second electrode. |
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