Semiconductor wafer, semiconductor device diced from semiconductor wafer, and method for manufacturing semiconductor device

A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region wh...

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Bibliographische Detailangaben
Hauptverfasser:	Satoh Tomotoshi, Morishita Satoshi, Yasui Tadashi, Kinoshita Takao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.