Semiconductor device and method of making

Semiconductor device and method of making

Laterally diffused metal-oxide-semiconductor (LDMOS) device is disclosed. The device is surrounded by an isolation ring and a buried layer of a first doping type, that is of the same type as its source and drain regions of the same doping type. A control gate of the device includes step gate dielect...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhu Ronghua, Zuo Jiang-Kai, Lin Xin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Laterally diffused metal-oxide-semiconductor (LDMOS) device is disclosed. The device is surrounded by an isolation ring and a buried layer of a first doping type, that is of the same type as its source and drain regions of the same doping type. A control gate of the device includes step gate dielectric.