Single-crystal 4H-SiC substrate

Single-crystal 4H-SiC substrate

A single-crystal 4H-SiC substrate includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The recesses have a diameter no smaller than 2 μm and no larger than 20 μm. The recesses have a depth...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kawazu Zempei, Hamano Kenichi, Tanaka Takanori, Ohno Akihito, Tomita Nobuyuki, Mitani Yoichiro
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A single-crystal 4H-SiC substrate includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The recesses have a diameter no smaller than 2 μm and no larger than 20 μm. The recesses have a depth no smaller than 0.01 μm and no larger than 0.1 μm. A single-crystal 4H-SiC substrate also includes a 4H-SiC bulk single-crystal substrate; and an epitaxial first single-crystal 4H-SiC layer on the 4H-SiC bulk single-crystal substrate and having recesses. The density of the recesses in the epitaxial first single-crystal 4H-SiC layer is at least 10/cm2, and the epitaxial first single-crystal 4H-SiC layer has a defect density no larger than 2/cm2.