Method and device for controlling amount of hot dip galvanization adhesion

The present invention is provided with: a duct of which one end interconnects to a wiping nozzle (22, 23) and the other end is open; a first valve (17) that controls the actual gas pressure (P1′) of the wiping nozzle (22, 23); a second valve (18) that controls the gas flow rate (Q2) dissipating to o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Morishita Hisao, Yamamoto Takashi, Tanaka Masayoshi, Kakemizu Norikatsu, Suemori Hideaki, Yamashita Ryuuichi
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONTROLLING DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PHYSICS REGULATING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
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Beschreibung
Zusammenfassung:	The present invention is provided with: a duct of which one end interconnects to a wiping nozzle (22, 23) and the other end is open; a first valve (17) that controls the actual gas pressure (P1′) of the wiping nozzle (22, 23); a second valve (18) that controls the gas flow rate (Q2) dissipating to outside the system from another branched duct; a wiping pressure setting unit (11) that sets the set gas pressure (P1) of the wiping nozzle (22, 23); a first valve aperture setter (13) that sets the valve aperture of the first valve (17); a second valve aperture setter (14) that sets the valve aperture of the second valve (18); and a computation processing unit (12) that presents to the first valve aperture setter (13) the valve aperture at which the gas pressure (P1′) matches a set gas pressure (P1), and presents to the second valve aperture setter (14) the valve aperture at which the total gas flow rate (QT) supplied from a gas supply device (15) becomes uniform.