Image sensor including photoelectric conversion devices

An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ahn Jung-chak, Gong Joo-yeong, Lee Tae-yon, Lee Myung-won, Na Kyoung-won
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor photoelectric conversion device and extending in a first direction perpendicular to the first surface, and an organic photoelectric conversion device stacked on the second surface of the substrate.