Light-emitting device

A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hsu Tzu-Chieh, Tao Ching-San, Hsieh Min-Hsun, Ou Chen, Chen Chao-Hsing
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.